{"schemaVersion":1,"slug":"insulated-gate-bipolar-transistor","name":"Insulated-gate bipolar transistor","kind":"symbol","abbreviation":"IGBT","aliases":["IGBT power transistor","insulated gate transistor"],"category":"electronics-components","drawingTypes":["Schematic"],"referenceFamilies":["Manufacturer"],"summary":"A power transistor combining insulated-gate control with a bipolar collector-emitter conduction structure.","description":["A power transistor combining insulated-gate control with a bipolar collector-emitter conduction structure.","On a schematic, identify the gate drive, collector/emitter and any separate emitter-sense connection and trace the converter switching leg and driver return. Keep the component tag and signal/reference names consistent across the control drawing, terminal schedule and device documentation.","An IGBT is not a MOSFET with renamed pins; reverse conduction and antiparallel-diode arrangements depend on the selected device.","Terminal letters describe electrical roles, not package pin numbers. Check the selected public datasheet for the actual pin assignment, polarity and any internally connected terminals before completing the drawing."],"readingNotes":["Identify the gate drive, collector/emitter and any separate emitter-sense connection.","Trace the converter switching leg and driver return."],"drawingChecklist":["Label the gate drive, collector/emitter and any separate emitter-sense connection.","Cross-reference the converter switching leg and driver return.","Add the selected device or circuit documentation revision, power/reference connections and project signal convention."],"distinction":"An IGBT is not a MOSFET with renamed pins; reverse conduction and antiparallel-diode arrangements depend on the selected device.","facts":[{"label":"Common schematic mnemonic","value":"IGBT — descriptive only; project/device documentation defines reference designations."},{"label":"Terminal / interface focus","value":"The gate drive, collector/emitter and any separate emitter-sense connection"},{"label":"Artwork scope","value":"Original educational component glyph; not a certified standard graphic or package pinout."}],"references":[{"sourceId":"pub-electronics-infineon-igbt","relevance":"Public primary manufacturer documentation establishes the component function or circuit/topology relationship. Preview geometry and drafting explanations are independently authored."}],"related":["n-channel-enhancement-mosfet","diode"],"artwork":"electronics-igbt","publishedOn":"2026-10-14","updatedOn":"2026-10-14","provenance":"independent-public-research","url":"https://eloragrid.ai/symbols/insulated-gate-bipolar-transistor","illustration":{"url":"https://eloragrid.ai/library/illustrations/insulated-gate-bipolar-transistor.svg","scope":"Original educational concept; not an official standard graphic or product footprint","license":"https://creativecommons.org/licenses/by/4.0/"},"sources":[{"id":"pub-electronics-infineon-igbt","title":"IGBT device families","publisher":"Infineon Technologies","url":"https://www.infineon.com/products/power/igbt","type":"manufacturer","scope":"Public insulated-gate bipolar transistor family documentation. Ratings, antiparallel diode configuration and gate-drive requirements remain device-specific.","checkedOn":"2026-10-14","reuse":"link-only","relevance":"Public primary manufacturer documentation establishes the component function or circuit/topology relationship. Preview geometry and drafting explanations are independently authored."}]}